ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,720, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Through mold interconnect drill feature" was invented by Robe... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... और पढ़ें
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,725, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interlevel dielectric structure i... और पढ़ें