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US Patent Issued to Intel on April 14 for "Through mold interconnect drill feature" (Arizona Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,720, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Through mold interconnect drill feature" was invented by Robe... Read More


US Patent Issued to NVIDIA on April 14 for "Reverse embedded power structure for graphical processing unit chips and system-on-chip device packages" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... Read More


US Patent Issued to NVIDIA on April 14 for "Reverse embedded power structure for graphical processing unit chips and system-on-chip device packages" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... Read More


US Patent Issued to TAIWAN SEMICONDICTOR MANUFACTURING on April 14 for "Metal capping layer for reducing gate resistance in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... Read More


US Patent Issued to TAIWAN SEMICONDICTOR MANUFACTURING on April 14 for "Metal capping layer for reducing gate resistance in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Vertical semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Vertical semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 14 for "Interlevel dielectric structure in semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,725, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interlevel dielectric structure i... Read More