ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,720, issued on April 14, was assigned to Intel Corp. (Santa Clara, Calif.). "Through mold interconnect drill feature" was invented by Robe... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,721, issued on April 14, was assigned to NVIDIA Corp. (Santa Clara, Calif.). "Reverse embedded power structure for graphical processing un... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,722, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by San... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,723, issued on April 14, was assigned to TAIWAN SEMICONDICTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan). "Metal capping layer for reduci... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,724, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Vertical semiconductor device" was invente... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,725, issued on April 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Interlevel dielectric structure i... Read More